二极管参数中英文对照表

文字符号中文EnglishI_F(AV)正向平均电流(整流管)mean foreard current (of diode)I_T(AV)通态平均电流mean on-state currentV_RSM反向不重复峰值电压non-reetitive peak reverse voltageV_RRM反向重复峰值电压repetitive peak reverse voltageV_DSM断态不重复峰值电压non-repetitive peak off-state voltageV_DRM断态重复峰值电压repetitive peak off-state voltageV_FM正向峰值电压(整流管)peak forward voltage (of diode)V_TM通态峰值电压peak on-state voltageT_jm 高等效结温maximum virtual junction temperatureF紧固力mounting forceI_RRM反向重复峰值电流repetitive peak reverse currentI_DRM断态重复峰值电流repetitive peak of-state currentV_GT门极触发电压gate trigger voltageI_GT门极触发电流gate trigger currentR_jc结壳热阻junction-case thermal resistanceQ_rr反向恢复电荷reverse recovery chargeI_TM通态峰值电流peak on-state currentI_FM正向峰值电流(整流管)peak forward current (of diode)I_TSM通态浪涌电流surge on-state currentdv/dt断态电压临界上升率critical rate of rise of off-state voltagedi/dt通态电流临界上升率critical rate of rise of on-state currentt_gt门极控制开通时间gate controlled turn-on timet_q电路换向关断时间cricuit commutated turn-off timeI_RMS通态方均根电流R.M.S. on-state current(dv/dt)_c换向电压临界上升率(双向晶闸管)critical rate of rise of commutating voltage(of bi-directional thyristor)t_rr反向恢复时间(二极管的)reverse recovery time (of diode)t_on开通时间turn on timet_s存储时间storage timet_f下降时间fall time